Water supply apparatus and method thereof

ABSTRACT

A water supply apparatus and a method thereof have a high capability of peeling-off and removing unnecessary objects such as a resist film, and parameters for setting efficient water supply conditions. The water supply apparatus and the method are designed to supply water for cleaning, peeling-off, or treating a target article. On a surface of the target article to be processed, a nozzle device is provided for spraying a mixture of water vapor and water mist. At least the following parameters are respectively set as water supply conditions to proper values so as to supply water to the target article, and these parameters include (1) a weight ratio of water vapor to water mist on the surface to be processed, (2) a temperature of the surface to be processed, and (3) a distance between a (water) blowing port of the nozzle device and the surface to be processed.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates generally to apparatus and methods for supplying water (H₂O) in a product manufacturing process, the water having high purity and, for example, to be used for removal operations, which may include surface working of, washing, or peeling-off from, the product. More specifically, the invention relates to a water supply apparatus and methods for treating the product, as in a peeling-off operation, i.e., removing unnecessary materials or objects (herein called “unnecessary objects”, or “objects”) from the product, which product may also be referred to as a “target article”. The products, or target articles, may be a semiconductor wafer, hard disk (HD), liquid crystal display (LCD) or flat panel display (FPD)), for example. The objects may be a resist film deposited on a surface of the target article in a lithography step, or may be a polymer residue or the like deposited in an etching step.

[0003] 2. Description of the Related Art

[0004] In a process of manufacturing such target articles, a resist is coated on a surface of such target articles, and precision machining is carried out to form a pattern or the like on the surface of the target articles. Then, unnecessary objects, such as a resist film and a polymer residue deposited on the surface of the target articles, are removed.

[0005] Technologies available for removing unnecessary objects, such as the resist film, include a plasma ashing method for ashing and removing the resist film by oxygen plasma; a method for heating, dissolving and removing the film by an organic solvent (solvent containing phenol, halogen or the like); a method of heating and dissolving by concentrated sulfuric acid/hydrogen peroxide; and the like.

[0006] However, all the above-described methods need time, energy and chemical materials for decomposing and dissolving the resist film and the like, and investment in the steps of decomposing and removing the resist film or the like is large. In the case of peeling-off the resist film by a generally used plasma asher, many facilities are necessary. These may include a vacuum device/plasma source, semiconductor gas, complicated devices, and a controller for vacuum control, plasma stability control and the like. Consequently, such facilities present problems of large size, high costs and the like. In the case of using wet cleaning, many process devices may be required and many environmental concerns must be taken into consideration in dealing with a great quantity of chemical solution, high-temperature chemical solution control, waste solution, drainage and the like.

[0007] Therefore, in the technical field of surface precision machining, including technology for removing such unnecessary objects, there is a need, for example, to provide systems and methods using materials presenting low or minimal impact on the environment. Such systems and methods would depart from the conventional technology of using chemical materials and chemical treatment, and there has been an expectation for use and development of this system.

[0008] The inventors filed a patent application No. 2001-264627, dated Aug. 31, 2001, “Water Supplying Apparatus and Water Supplying Method” (the “Prior Application”). Although such apparatus and methods of the Prior Application departed from the conventional technology, there is still a need for improved efficiency of surface working of, washing, or peeling-off from, the target article, and for less impact on the environment in the removal of unnecessary objects from target articles, for example.

SUMMARY OF THE INVENTION

[0009] Broadly speaking, the present invention is an improvement on the Prior Application, and fills these and other needs by providing a water supply apparatus and methods capable of supplying water mist and water vapor that is mixed, and sprayed and directed onto the target article under controlled conditions so as to cause a removal operation to be performed, such as peeling-off of unnecessary objects from the target article, for example. As a result, the present invention enables the removal operation to be executed more efficiently and effectively than conventionally in processes such as resist peeling-off, polymer removal, cleaning and the like, and to achieve process simplification, zero emission and other objectives.

[0010] In order to fill these needs, the present invention may be configured in a number of embodiments, such as the following. A water supply apparatus is provided for supplying spray material to perform a treatment such as cleaning of, peeling-off from, or surface working of, a target article. The apparatus may include a system for converting the water to the spray material, which may be in the form of water vapor and water mist. The apparatus may also include a nozzle for spraying and directing the spray material to a surface of the target article. Water supply parameters are defined and set to proper values so that the water vapor and water mist may be supplied to the target article to achieve optimum removal results. The water supply parameters may include at least (1) a weight ratio of the water vapor to the water mist supplied to the surface of the target article to be processed, (2) a temperature of such surface to be processed, and (3) a distance between a blowing (or discharge) port of the nozzle device and the surface to be processed.

[0011] In one embodiment of the water supply apparatus of the present invention, the apparatus may be configured to separately supply water vapor and water mist to the nozzle, and the nozzle is configured with coaxial passages to respectively receive the separate water vapor and water, and to mix the water vapor and the water mist, which is directed from the nozzle device to direct the resulting spray material toward the target article.

[0012] In another embodiment of the water supply apparatus of the present invention, the apparatus may be configured so that the nozzle directly blows and directs pressurized hot water toward the target article, so that boiling occurs as and after the pressurized hot water exits the nozzle under the set water supply parameters. The boiling occurs due to pressure reduction during the blowing and directing, to form water vapor and water mist.

[0013] In a further embodiment of the water supply apparatus of the present invention, a separate annular-shaped water vapor conduit supplies water vapor adjacent to a discharge port of a high pressure liquid water supply conduit, so that upon mixing of the liquid water and the water vapor, water vapor and water mist are formed and discharged from a main discharge port.

[0014] In a still further embodiment of the water supply apparatus of the present invention, a separate annular-shaped heated water conduit supplies water adjacent to a discharge port of a water vapor supply conduit so that upon mixing of the heated liquid water and the water vapor, water vapor and water mist are formed and are discharged from a main discharge port.

[0015] In one parameter control embodiment of the water supply apparatus of the present invention, one of the water supply parameters, the weight ratio of water vapor to water mist on the surface to be processed, may be set to be in a range of about 20 to 80 weight %.

[0016] In another parameter control embodiment of the water supply apparatus of the present invention, another of the water supply parameters, the temperature of the surface to be processed, may be set in a range of more than 50 to less than 150° C.

[0017] In a further parameter control embodiment of the water supply apparatus of the present invention, another of the water supply parameters, the distance between the blowing port of the nozzle device and the surface to be processed, is set lower than about 30 mm. to about 5 mm.

[0018] In a yet further embodiment of the present invention, a method for supplying water to perform a removal treatment, such as cleaning of, peeling-off from, or working of, a target article, may include an operation of defining parameters (e.g., water supply parameters), and another operation may supply water vapor and water mist to a surface of the target article to be processed under the control of at least one of the defined water supply parameters. In the supplying, the water supply parameters are set to proper values, and may include at least (1) a weight ratio of the water vapor to the water mist directed onto the surface of the target article to be processed, (2) a temperature of such surface to be processed, and (3) a distance between a water blowing port and such surface to be processed.

[0019] In an additional embodiment of the method of the present invention, in the water supply operation, water supply facilities are provided to supply both the water vapor and water mist, which are directed as a spray material toward the target article. Before the directing operation, the water vapor and the water mist are mixed. One aspect of the additional embodiment may include the water supply operation providing pressurized hot water released from a high-pressure container into a lower-pressure container to cause boiling of the hot water due to pressure reduction during the release to thereby form water vapor and water mist. The hot water supply may be provided through one or more blowing ports of the high-pressure container, which may be a nozzle, for example.

[0020] In a yet other embodiment of the method of the present invention, the weight ratio of water vapor to water mist directed to the surface to be processed is set in a range of above about 20 to below about 80 weight %.

[0021] In one more embodiment of the method of the present invention, the temperature of the surface to be processed is set in a range of above about 50 to below about 150° C.

[0022] In a still further embodiment of the method of the present invention, the distance between the water blowing port and the surface to be processed is set in a range from lower than about 30 mm to about 5 mm.

[0023] According to the water supply apparatus and the water supply method of the present invention, the weight ratio of water vapor to water mist on the surface to be processed is preferably set in a range of above about 20 to below about 80 weight %, and more preferably in a range of 20 to 60 weight %, and still more preferably at about 50 weight %.

[0024] According to the water supply apparatus and water supply method of the present invention, the temperature of the surface to be processed is preferably set in a range of above about 50 to below about 150° C., and more preferably in a range of about 70 to about 130° C., and most preferably in a range of from about 100 to about 120° C.

[0025] According to the water supply apparatus and the water supply method of the present invention, the distance between the blowing port(s) of the nozzle and the surface to be processed may be in a range of about 30 mm to about 100 mm and be valid for cleaning, surface working, and peeling-off, and more preferably the distance is set to be lower than about 30 mm.

[0026] According to the water supply apparatus and method of the present invention, parameters other than the above-described Parameters (1) to (3) may be provided. Specifically, for example, parameters of (4) a spraying pressure or a speed of a spray material through the nozzle, and (5) a total amount of water vapor and water mist, may be set. The apparatus and method of the present invention can be constructed by including one or both of these additional parameters.

[0027] Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example t-he principles of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The present invention will be readily understood by reference to the following detailed description in conjunction with the accompanying drawings, in which like reference numerals designate like structural elements.

[0029] FIGS. 1(a) and 1(b) are respective schematic structure views of water vapor and water mist used in the present invention;

[0030]FIG. 2(a) is a schematic view of an exemplary configuration of an apparatus and method according to the present invention for supplying water vapor and water mist under controlled conditions for removing unnecessary objects from a target article;

[0031] FIGS. 2(b) through 2(g) are schematic views of other configurations of the present invention for supplying a mixture of water vapor and water mist under the controlled conditions for removing the unnecessary objects from the target article;

[0032]FIG. 3 is a graph relating to the present invention and showing a relationship between a peeling-off percentage (of a resist film from a target article when a spray material is supplied from a nozzle), and a surface temperature (° C.) of the target article;

[0033]FIG. 4 is a graph relating to the present invention and showing a relationship between a peeling-off percentage (of the resist film) on the surface of the target article) and a clearance (or distance) between a blowing port of the nozzle device (which supplies the spray material) and a surface of the target article to be processed;

[0034]FIG. 5 is a graph showing a relationship between resist peeling-off time (in seconds) and the weight ratio of a mixture of water vapor and water mist (directed against resist as an unnecessary object on a target article according to the present invention), which peeling-off time is the time required to completely peel-off resist from the target article in the operation of the apparatus and method of the present invention;

[0035]FIG. 6 is a bar graph showing a relationship between the distance between the blowing port of the nozzle and the surface of the target article to be processed, and the temperature of the surface of the target article that is subjected to the water vapor and the water mist from the nozzle in the operation of the present invention;

[0036]FIG. 7(a) is a graph related to the apparatus and method of the present invention, showing a relationship between spraying pressure of the spray material M (which may be another parameter), and the weight ratio of the spray material M (i.e., of the mixture of the water vapor and the water mist) directed against the surface of the target article;

[0037]FIG. 7(b) is a graph related to the apparatus and method of the present invention, showing a relationship between vapor pressure of the water vapor, and temperature; and

[0038]FIG. 8 is a flow chart illustrating an embodiment of a method of the present invention in which parameters for the control of a removing operation may be defined to include at least one or more of: (1) a weight ratio of the water vapor to the water mist directed onto the surface of the target article to be processed, (2) a temperature of such surface to be processed, and (3) a distance between a discharge port of the nozzle device and the surface to be processed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0039] An invention is described for controlling parameters in the supply of water mist and water vapor that is mixed, sprayed, and directed onto a target article so as to cause removal of unnecessary objects from the target article. The present invention is described in more detail in terms of enabling a peeling-off treatment to be executed more efficiently and effectively than conventionally in removal processes such as resist peeling-off; and in terms of polymer removal, cleaning and the like; and achieving process simplification, zero emission and other objectives. It will be obvious, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to obscure the present invention.

[0040] Referring to FIGS. 1(a) and 1(b), there are schematically shown respective exemplary structures of water vapor 12 (also referred to as “water steam”) and water mist 14 provided by the present invention. As to the example shown in FIG. 1(a), the term “water vapor” refers to water 15 (see arrow 15 in FIG. 2(a)) in a vaporized state. The vaporized state results from liquid water 15, such as deionized water (DIW), that has been heated and transformed into water molecules (represented by the dark circles 16 in FIG. 1(a)) that are generally in air 17. The water molecules 16 may also be referred to as “vaporized water”. While the water molecules 16 of the vaporized state are generally present in air 17, the water molecules 16 may be present in other gases, such as nitrogen, argon, or helium. Also, 100% water vapor (i.e., containing 100% vaporized water 16 and no air or gas 17) can be used. The water vapor 12 may be maintained in the desired described condition by controlling the temperature of the water vapor 12 to be higher than 100° C. under an atmospheric pressure, and is preferably 130 to 160° C.

[0041] As to the example shown in FIG. 1(b), the term “water mist” refers to liquid water 15 (such as DIW) that has been heated to less than 100° C. and acted on to transform the heated liquid water 15 into liquid water particles 18 contained in air, or other gases, such as nitrogen, argon, or helium. The particles 18 are larger than the water molecules 16. The water mist 14 may be maintained in the desired described condition by controlling the temperature of the water mist 14 to be less than 100° C. under an atmospheric pressure.

[0042] In general, water vapor 12 containing vaporized water 16 in gas 17 can be generated by, for example, dropping liquid DIW 15 onto a heating plate and vaporizing the liquid DIW 15, by heating the liquid water 15, or by directly blowing pressurized hot water 15 and causing boiling by a pressure reduction during the blowing.

[0043] In general, water mist 14 can be generated by, for example, forcibly ejecting liquid DIW 15 of a normal temperature (i.e., room temperature), or a mixture of liquid DIW 15 and gas 19; spraying water 15 to the vicinity of an ejection port 21 (see port 21-1 in FIG. 2(a)), (in each case referred to as a so-called “spraying principle”); or by directly blowing pressurized hot water 15 and causing boiling by a pressure reduction during the blowing.

[0044] Various embodiments of the present invention are identified using reference numbers. Specific embodiments of the present invention are identified using reference numbers with a “-#”, such as “21-1”, for example.

[0045]FIG. 2(a) schematically shows a first embodiment 22-1 of an apparatus 22 of the present invention. A treatment chamber 23 is provided to contain a flat or planar target article 24, such as a semiconductor wafer disposed (loaded) on a table 26 rotated by a rotary shaft 27. An embodiment 31-1 of a nozzle device 31 is configured to contain high pressure, and may be a nozzle 32-1 having a blowing (or ejection) port 21-1. The port 21-1 of the device 31-1 is disposed oppositely to a surface 33 of the target article 24 to be processed. The surface 33 is located away from the port 21-1 by a predetermined clearance (also referred to as a gap or distance) H. A supply passage, such as a pipe, 34 is connected to the device 31-1. This passage 34 is also connected to an intermediate device 40-1, and water 15 (such as DIW) is supplied to the device 40-1 from a second pipe (or passage) 41. For removal of any of the above-described unnecessary objects from the surface 33 of the target object 24, the target article 24 is set on the table 26 to be rotated at a predetermined speed and the pressure in the chamber 23 may be controlled by reference to a gauge 23G, for example, and adjusting the pressure in the chamber 23 by use of an air inlet 36.

[0046] In a general sense, FIG. 2(a) shows that under high water pressure contained by the nozzle 32-1, a spray material M′ exits from the port 21-1, and is sprayed and directed as spray material M to the surface 33. The port 21-1 is shown located in a discharge tip side 42 of the nozzle 32-1. The nozzle 32-1 is scanned in a radial direction of the target article 24. The spray material M impacting onto the surface 33 performs the removal operations (e.g., the surface cleaning, or resist peeling-off, are carried out).

[0047] With respect to FIGS. 2(a) through 2(g), the spray material M′ and the spray material M are referred to separately to facilitate description of various embodiments of the apparatus 22 of the present invention. In each embodiment, the spray material M′ is emitted from the port 21 of the nozzle 32, and is directed by and sprayed as the spray material M to the surface 33 to be processed. These embodiments may be configured and operated so that the spray materials M and M′ may be similar to each other, or different from each other, as described below.

[0048] For example, still referring to FIG. 2(a), the first embodiment 22-1 of the apparatus 22 provides different spray materials M′ and M. Pressurized hot water 15 forms the spray material M′ (shown within the nozzle 32-1). The water 15 may be DIW that is heated and pressurized by the device 40-1. The pressurized heated water 15 flows in the pipe 34 to the first embodiment 31-1 of the nozzle device 31. The hot pressurized water 15 (i.e., the spray material M′) is directly blown out of (e.g., ejected from or exits) the single port 21-1. It may be understood that the device 40-1 and the nozzle 32-1 from the pipe 34 to the tip side 42 define a system for converting the hot pressurized water 15 to the water vapor 12 and water mist 14. In detail, as and after the hot pressurized water 15 exits the port 21-1, the spray material M is generated in the chamber 23 by boiling caused by a pressure reduction during the ejection from the port 21-1. The spray material M is in the form of the water vapor 12 and the water mist 14. Thus, the port 21-1 of the nozzle 32-1 is effective for spraying the water vapor 12 and the water mist 14, which form the spray material M. The spray material M flows (or is sprayed) to the surface 33 to processed. In the first embodiment 22-1, as the spray material M flows to the surface 33, some of the water molecules 16 (i.e., some of the vaporized water 16 shown in FIG. 1(a)) may cool and form the lower temperature water mist 14 having the larger water particles 18. As described below, the flow of the spray material M and the processing of the article 24 may be under controlled conditions, such as by having a proper value set for one or more of the parameters to control the removing treatment. These controlled conditions may be provided by a controller 43, and an embodiment 43-1 shown in FIG. 2(a) may be connected to the device 40-1 and to the inlet 36 (e.g., to a valve thereof) for such control. In this manner, with these values and as described more fully below, the treatment of the article 24 may be optimized.

[0049] Referring to FIGS. 2(b), 2(c), and 2(d), the spray materials M′ and M may be similar in a second embodiment 22-2 of the apparatus 22. FIG. 2(b) shows a second embodiment 40-2 of the device 40 separately supplying the water vapor 12 and the water mist 14. The device 40-2 may include a DIW water mist supply 44. The DIW water mist supply 44 provides room-temperature DIW water mist 14 to a second embodiment 34-2 of the pipe 34. The embodiment 34-2 may be in the form of a dual-flow pipe having a separate water mist channel 34-2M and a separate water vapor channel 34-2V. The pressure of the water mist 14 may be controlled by an embodiment 46-2 of a flow controller 46 of the device 40-2. The flow controller 46-2 may be connected to the controller 43-2 to set values of the parameters, such as a value of the weight of the water mist 14 supplied to the pipe 34-2M and then to the nozzle 32-2.

[0050] The device 40-2 may also include a steam generator 45 that supplies water vapor 12 to the water vapor channel 34-2V. A pressure valve 48 and an indicator (pressure gauge) 49 enable control of the water vapor 12 to the channel 34-2V, such control may be provided by the controller 43-2 connected to the pressure valve 48, to set values of the parameters, such as a value of the weight of the water vapor 12 supplied to the pipe 34-2V and then to the nozzle 32-2.

[0051] It may be understood that the device 40-2 and the pipes 34-2M and 34-2V define another system for converting water 15 input to the DIW supply 44 and to the steam generator 45. The conversion is to the respective water vapor 12 and water mist 14.

[0052] The embodiments 34-2M and 34-2V of the pipe 34-2 separately carry the water vapor 12 and the water mist 14 to a respective second or a third embodiment 31-2 or 31-3 of the nozzle device 31, to form the spray material M′. FIG. 2(c) shows the nozzle device 31-2 as having two separate nozzles 32-2, including one nozzle 32-2V for the water vapor 12 and one nozzle 32-2M for the water mist 14. The spray material M′ flows through the respective nozzles 32-2 to respective ports 21-2V and 21-2M. The port 21-2V is for the water vapor 12 and a port 21-2M is for the water mist 14. The spray material M′ (in the form of each separate flow stream of the water vapor 12 and the water mist 14) is blown out of (i.e., exits, is ejected from, directed and sprayed) the respective ports 21-2V and 21-2M and into the chamber 23. The spray material M′ that is directed into the chamber 23 and toward the surface 33 is in the form of the spray material M that is similar to the separate water vapor 12 and water mist 14 of the spray material M′, but the water vapor 12 and water mist 14 are now mixed in the chamber 23. The spray material M is directed by the nozzle device 31-2 and flows to the surface 33. As described below, the flow of the spray material M and the processing of the article 24 may be under controlled conditions, provided for example, by the controller 43-2. The controlled conditions may be having a proper value set for one or more of the parameters to control the removing treatment.

[0053]FIG. 2(d) shows another embodiment 31-3 of the nozzle device 31 as having two separate nozzles 32-3, one nozzle 32-3V for the water vapor 12 and one nozzle 32-3M for the water mist 14. The spray material M′ flows through the respective nozzles 32-3 to respective ports 21-3V and 21-3M. In this embodiment 31-3, the nozzles 32-3V and 32-3M, and the respective ports 21-3V and 21-3M, are coaxial and provide a preferred embodiment because the nozzles 32-3V and 32-3M, and the respective ports 21-3V and 21-3M, direct the respective water vapor 12 and water mist 14 more downwardly toward the surface 33. The port 21-3V is for the water vapor 12 and the port 21-3M is for the water mist 14. The spray material M′ (in the form of each separate flow stream of the water vapor 12 and the water mist 14) is blown out of (i.e., exits, is ejected from, directed and sprayed), the respective ports 21-3V and 21-3M and is directed into the chamber 23 to the surface 33.

[0054] Referring to FIGS. 2(e), 2(f), and 2(g), the spray materials M′ and M may be different in a third embodiment 22-3 of the apparatus 22. FIG. 2(e) shows a third embodiment of the device 40-3 for separately supplying the water vapor 12 and heated water 15H. The device 40-3 may include an electric water heater 51 to which DIW 15 is supplied from a DIW supply 52. The heater 51 provides heated DIW water (e.g., heated to a temperature below 100 degrees C.) to a valve 53 connected to a flow meter 54.

[0055] The flow meter 54 is connected to a third embodiment 32-3 of the nozzle 32. FIG. 2(f) shows the embodiment 32-3 in the form of one embodiment 32-3VH of a dual-flow nozzle 32 having a separate water vapor channel 34-3V and a separate heated water channel 34-3H.

[0056] The heater 51 may be a boiler having the capability of supplying the lower temperature DIW 15H to the valve 53, and a capability of supplying steam (or water vapor 12) at temperatures such as 130 to 150 degrees C. to an outlet 56 that supplies water vapor 12 to a pressure gauge 57 connected to a valve 58. The valve 58 is connected to a pressure regulator 59 connected to the water vapor channel 34-3V of the nozzle 32-3. The pressure valve 58 and the regulator 59 enable control of the pressure and flow rate of the water vapor 12 supplied to the channel 34-3V (FIG. 2(f)).

[0057] To provide the controlled conditions described below, a third embodiment of the controller 43-3 may operate by having a proper value set for one or more of the parameters to control the removing treatment. For this purpose, the controller 43-3 is connected to the heater 51, to the valves 53 and 58, to the flow meter 54, and to the pressure regulator 59. Thus, the temperature, pressure and flow rate of the DIW water 15 and of the water vapor 12, may be adjusted to provide the parameter control described below.

[0058] The nozzle embodiment 32-3 of embodiment 22-3 may be used with either of two nozzle configurations, one provided by the nozzle embodiment 32-3VH shown in FIG. 2(f), and the other by a nozzle embodiment 32-3HV shown in FIG. 2(g). These embodiments 32-3VH and 32-3HV are similar in that both have the channels 34-3V and 34-3H, and such channels are coaxially arranged. The embodiments differ according to which channel is interior or exterior of the other channel. As shown in FIG. 2(f), the water vapor channel 34-3V is the exterior coaxial channel, whereas in FIG. 2(g) the heated water channel 34-3H is the exterior coaxial channel. In each case, the arrangement of the channels 34-3 separately guides the respective water vapor 12 and heated water 15 to a respective port 21-3. In FIG. 2(f), there is shown a port 21-3H directing the water 15H into a space between a port 21-3WV. As the water 15H enters the space the water 15H is transformed into the water mist 14. The port 21-3WV supplies the water vapor 12 to that space. A main port 21-3VH directs both the water vapor 12 and the water mist 14 out of the nozzle 32-3VH and toward the surface 33.

[0059] In FIG. 2(g), a port 21-3V directs the water vapor 12 into a space adjacent to the port 21-3V. A port 21-3H directs the heated water 15H into the space, where the water 15H is transformed into water mist 14. A main port 21-3HV directs both the water vapor 12 and the water mist 14 out of the nozzle 32-3HV and toward the surface 33.

[0060] The spray material M′ includes the water vapor 12 and the heated water 15H as they just exit the respective ports 21-3V and 21-3H in FIG. 3(g), or the respective ports 21-3WV and 21-3H in FIG. 2(g). The spray material M flows from the main port 21-3VH (FIG. 2(f)) or 21-3HV (FIG. 2(g)) into the chamber 23 and toward the surface 33, and is in the form of water vapor 12 and water mist 14.

[0061] It may be understood that the device 40-3 and the ports 21-3WV and 21-3H (of FIG. 2(f)), and the ports 21-3V and 21-3H (of FIG. 2(g), define another system for converting water 15 input to the heater 51. The conversion is to the respective water vapor 12 and water mist 14. The nozzles 32-3VH and 32-3HV with the respective main ports 21-3VH and 21-3HV spray (and direct) the water vapor 12 and water mist 14 to the surface 33.

[0062]FIGS. 3 through 7 are graphs illustrating various relationships of parameters by which the removing operation may be controlled to increase efficiency, for example, and optimize treatment of the target article 24. For ease of description, the parameters are referred herein to as “water supply parameters” to avoid reference to “parameters relating to both water vapor 12 and water mist 14”, for example. It is to be understood that references herein to “water supply parameters” means and includes “parameters relating to both water vapor 12 and water mist 14”. The parameters are defined and controlled as a way of controlling the removal operations to minimize, for example, the time required to remove all of the above-defined unnecessary objects from the surface 33 of the target article 24. This time is also referred to herein as “peeling-off time”, or “resist peeling-off time”. Thus, it may be understood, that in one example of the present invention, this removal may be referred to as “peeling-off”, and a process of peeling-off the unnecessary object may be said to result in a “peeling-off state” of the surface 33, which state represents the amount (zero to 100%) of the unnecessary object that has been removed. In the context of FIGS. 3 through 7, for example, a 100% peeling-off state, for example, refers to a complete removal of the unnecessary objects from the surface 33. Such minimization of time may also, for example, reduce the amount of DIW 15 required for a particular removal operation.

[0063] The water supply parameters may include at least (Parameter 1) a weight ratio of the water vapor 12 to the water mist 14 supplied to the surface 33 of the target article 24 to be processed. This weight ratio of Parameter 1 is in terms of a numerator, which is the weight of the water vapor 12 in a unit volume of the spray material M at the surface 33 of the target article 24. This weight ratio of Parameter 1 is also in terms of a denominator, which is the combined (or total) weight of the water vapor 12 and the water mist 14 in such unit volume of the spray material M. The ratio of such numerator and denominator is expressed as a percentage (%) and may be expressed as the weight ratio % of Parameter 1, or simply the “weight ratio”.

[0064] The second parameter (Parameter 2) is a temperature Ts of such surface 33 to be processed. During the removal operations according to the present invention (e.g., while the spray material M is being directed onto the surface 33 of the target article 24), the temperature Ts may be measured, for example, by an infra red sensor system 61-1 such as that shown in FIG. 2(a), or a similar system 61-3 shown in FIG. 2(e). The system 61 may output a visual indication of the temperature Ts, or another form of indication, to permit control of the temperature Ts, and may be connected to the controller 43.

[0065] The third parameter (Parameter 3), is the distance H between the port 21 of the nozzle device 31 and the surface 33 to be processed (see H in FIGS. 2(a) and 2(e).

[0066] To illustrate the Parameters, reference is made to FIGS. 3 through 7, which are graphs based on data taken by the inventors in testing of the operation of the present invention. The graphs illustrate various relationships of the Parameters by which the removing operation may be controlled, i.e., may be performed under the above-described controlled conditions. In each case represented by these graphs, a device such as the intermediate device 40-1 shown in FIG. 2(a) was used to supply heated DIW 15. A rate of the supply of the DIW 15 was about 400 cc/min. Apparatus similar to apparatus 22-1 shown in FIG. 2(a) was used to provide both water mist 14 and water vapor 12 directed in the chamber 23 toward and onto the surface 33. Data relating to FIG. 3 is shown below in table 1. Peeling-off of the unnecessary objects resulted from the tests. These objects were in the form of the various resists listed below in Table 2. TABLE 1 Peeled-Off % vs. Surface Temperature Data of FIG. 3 Temperature ° C. resist A resist B resist C resist D Resist E Average 40 0 0 0 0 0 0 50 0 0 0 0 0 0 60 3 3 30 0 20 11.2 70 5 5 50 0 50 22 80 7 45 100 20 70 48.4 90 10 60 100 30 80 56 100 60 100 100 50 100 82 110 100 100 100 100 100 100 120 78 85 100 20 100 76.6 130 50 30 30 10 70 38 140 5 5 5 5 10 6 150 0 0 0 0 0 0 160 0 0 0 0 0 0

[0067] TABLE 2 Identification of Resists In FIG. 3 resist A i-line TOKYO OUKA, iP3250 film thickness 0.985 μm + Plasma Etching resist B i-line TOKYO OUKA, POSITIVE FILM THICKNESS 1.4 μm resist C i-line FFA POSITIVE FILM THICKNESS 1.0 μm resist D KrF FIJI FILM ORIN, POSITIVE FILM THICKNESS 0.56 μm R & P resist E i-line TOKYO OUKA, iP3250 FILM THICKNESS 0.985 μm R & P

[0068] TABLE 3 Peeled-Off % vs. Distance H Data for FIG. 4 Distance (mm) resist A resist B Resist C resist D resist E Average 5 95 80 100 60 90 85 10 100 100 100 100 100 100 15 90 100 100 100 90 96 20 60 70 50 20 50 50 25 20 45 20 5 20 22 30 0 0 0 0 0 0 40 0 0 0 0 0 0 50 0 0 0 0 0 0 60 0 0 0 0 0 0 70 0 0 0 0 0 0 80 0 0 0 0 0 0 90 0 0 0 0 0 0 100 0 0 0 0 0 0 110 120 130

[0069] TABLE 4 Distance H vs. Surface Temperature Data for FIG. 6 Distance (mm) Temperature (° C.) 5 104-150 10  98-121 15  87-104 20 87-94 30 50-87

[0070]FIG. 3 is a graph showing a relationship between the peeling-off state (i.e., % removed) of a resist film at the various temperatures Ts when the spray material M is supplied from the nozzle device, such as the device 31-1. As shown in FIG. 3, the range of temperature Ts was 40 to 160° C. In order to obtain the data (Table 1), standard values were used to establish operating conditions in addition to the temperature Ts of the target surface 33 and measurements of the peeling-off state. Exemplary data include (A) and (B) below. (A) is a 50% weight ratio between water vapor 12 and water mist 14 on the surface 33 (i.e., one part water vapor 12 and one part water mist 14). (B) is a distance H of 10 mm provided between the port 21 and the surface 33. Further, one curve is shown for each of the five resist types shown in Table 2. The duration of each removal operation for each of the resists was the same.

[0071] From FIG. 3 it can be easily understood that in the removal process of the present invention, exemplified by removal of these resists, the peeling-off state varies depending on the temperature Ts. In general, FIG. 3 shows that a preferred surface 33 temperature Ts would be in a range of above about 50 to below about 150° C. A more preferred range of temperature Ts is more than about 70 to about 130° C., because all of the resists are removed to some extent in this exemplary range. A still more preferable range of the temperature Ts is from about 100 to about 120° C. in view of the unexpectedly high (three resists 100%, and average 82%) removal of the resists. Such ranges, especially the range in which the removal of the resist is unexpectedly high, are examples of optimum removal results, i.e., optimum treatment of the target article 24.

[0072] For these resists, the most preferred temperature Ts is 110° C. at which all of the resists were 100% removed (peeled-off). The results presented in FIG. 3 may be attributed to hardening or alteration of the resist, which increases with increasing temperature Ts, making removal of the resist at the higher temperature Ts more difficult. On the other hand, permeation of the water vapor 12 through the resist appears to be resisted due to a slow diffusion speed when the surface temperature Ts is too low.

[0073] The curves of FIG. 3 show that the temperature Ts of the surface 33 is one of the important parameters to control in the removal operations according to the present invention. Further, a high peeling-off effect (improved removal rate) can be reliably obtained by setting and controlling the temperature Ts within such ranges, such that it is possible to realize a highly efficient removal of unnecessary objects, such as resist films.

[0074] An aspect of the present invention is also that the temperature Ts of the surface 33 greatly depends on the temperature of the spray material M and on the clearance H between the port 21 and the surface 33. One way, then, of controlling the temperature Ts of the surface 33, is by operation of the controller 43 to regulate the operation of the intermediate device 40 (including the various embodiments of the device 40) as described above so as to achieve a desired value of the temperature Ts by control of the temperature of the water mist 14, and of the water 15, and of the water vapor 12, as the case may be. Also, the desired value of the temperature Ts may be set in the apparatus 22 by causing the controller 43 to set a pressure in the chamber 23 to a value that achieves a desired temperature Ts.

[0075] Referring to FIG. 4, a graph is shown illustrating relationships between the resist film peeling-off state (i.e., % removed) of various resist films, and the clearance H (FIG. 2(a)) between the port 21 of the nozzle 32 and the surface 33 of the target article 24. In order to obtain the data on which FIG. 4 is based, standard values were used to establish operating conditions in addition to the clearance H and measurements of the peeling-off state. Exemplary data include (A) and (C) below. (A) is a 50% weight ratio between water vapor 12 and water mist 14 on the surface 33 (i.e., one part water vapor 12 and one part water mist 14). (C) is that the temperatures of the water vapor 12 and of the water mist 14 were set so that the temperature Ts of the surface 33 was about 100° C. (which FIG. 3 shows is a most preferred temperature Ts). Further, one curve is shown for each of the five resist types shown in Table 2. The above Table 3 identifies data on which the graph of FIG. 4 is based. The duration of each removal operation for each of the resists was the same.

[0076] From the curves of FIG. 4 it can be easily understood that in the removal process of the present invention, exemplified by these resists, the peeling-off state varies depending on the distance H between the port 21 of the nozzle 31 and the surface 33 of the target article 24. As shown in FIG. 4, to peel-off the resist, a preferred value of such clearance H is in a range of about 5 mm to below 30 mm. Further, FIG. 4 shows that a more preferred value of such clearance H is in a range of about 10 to 15 mm. While not shown by FIG. 4, in the case of carrying out only wafer cleaning (i.e., without the more difficult peeling-off), a range of 30 mm to 100 mm is also possible. Such ranges, especially the range in which the removal of the resist is 100% or very close to 100%, are examples of optimum removal results, i.e., optimum treatment of the target article 24.

[0077] It has also been determined that by changing the clearance H, the temperature Ts and a hitting force of the spray material M (of the water mist 14 and the water vapor 12) against the surface 33 can be adjusted. Accordingly, the Parameters of the removal operations of the present invention may be defined and values of the Parameters set according to the type of resist, for example, and those operations may be effectively carried out irrespective of the type of resist and process that are used.

[0078]FIG. 4 omits data corresponding to clearances H lower than 5 mm. A curve of actually measured data in this range would gently converge to a zero point (peeling-off state 0%, clearance 0 mm). However, for such values of clearance H lower than 5 mm, the force of the spray material M on the surface 33 becomes very strong. Thus, although an apparatus 22 may be designed, and is within the scope of the present invention, in which the clearance H is up to 2 mm to 3 mm, from the viewpoint of resist peeling-off, the apparatus 22 having a very small value of the clearance H would be less practical than the peeling-off obtained corresponding to the clearance H in the range from about 5 mm to about 15 mm, for example.

[0079] Referring to FIG. 5, a graph is shown illustrating relationships between the time (in seconds) required to attain a peeling-off of 100% of the resist from the surface 33, and the weight ratio (%) of the water vapor 12 to water mist 14 in spray material M directed onto the surface 33 of the target article 24. In order to obtain the data on which FIG. 5 is based, standard values were used to establish operating conditions in addition to the weight ratio and the measurements of the peeling-off state. Exemplary data include (C) and (D) below. (C) is the temperature T of the water vapor 12 and of the water mist 14, which were set so that the temperature Ts of the surface 33 was about 100° C. (which FIG. 3 shows is a most preferred temperature Ts). In the apparatus 22, the controller 43 would set (C). (D) is that the clearance H was about 10 mm. In the apparatus 22, the controller 43 would set H, as by moving the table 26 up or down relative to the nozzle 32. Also, various experiments were conducted for many samples of the target article 24, and the results were used to calculate averaged data.

[0080] From the curve of FIG. 5 it can be easily understood that in the removal process of the present invention, the rate of the peeling-off state varies depending on the weight ratio. Based on FIG. 5, it appears that one may expect a gentle upwardly open curved fluctuation to occur, such that the resist peeling-off time (or duration to peel-off 100% of the resist) has a minimum at one value of the weight ratio, and such duration increases from that minimum value for both lower and greater values of the weight ratio. The relative value of the minimum appears to be unexpectedly low compared to the values away from the minimum. Additionally, it can be easily understood from FIG. 5 that when the weight ratio is 20% or lower, or alternatively 80% or higher (in which the weight ratio was found to be very uneven), the rate of resist peeling-off is greatly lowered, and extends the removal processing time (or duration). Such ranges close to such minimum, especially the weight ratio corresponding to the minimum in which the time taken for 100% removal of the resist is unexpectedly low, are examples of optimum removal results, i.e., optimum treatment of the target article 24. Further, it may be understood that the exemplary values of the resist peeling-off time (below 60 sec.) at the weight ratio of 50% are said to be substantially less than the values of the resist peeling-off time corresponding to those weight ratios below 20% and above 80%, for example. In the context of the exemplary data in FIG. 5, for example, the weight ratios that result in substantially less resist peeling-off time may be said to be from about 35% to about 55%. For other wafers and resists and articles 24, etc., the weight ration % may be different, but FIG. 5 indicates that there is a range of values corresponding to substantially less resist peeling-off time.

[0081] This result (illustrating decreased rates of removal) is attributed to the belief that when one of the water vapor 12 and the water mist 14 becomes extremely small (corresponding to high or low weight ratios), there is insufficient water vapor 12 or water mist 14, as the case may be, to provide the function of the lower percentage part of the spray material M. The function of each of the water vapor 12 and the water mist 14 will be described later.

[0082] Referring to FIG. 6, a bar graph is shown illustrating relationships between the clearance H (as defined above) and the temperature Ts (as defined above). In order to obtain the data on which FIG. 6 is based (which is set forth in the above Table 4), standard values were used to establish operating conditions in addition to the clearance H and the temperature Ts. Exemplary data include (A), which is a 50% weight ratio between water vapor 12 and water mist 14 on the surface 33 (i.e., one part water vapor 12 and one part water mist 14). The duration of each removal operation for each of the resists was the same. Also, various experiments were conducted for many samples.

[0083] From the curves of FIG. 6 it can be easily understood that in the removal process of the present invention, the temperature Ts varies in direct proportion to variation of the clearance H.

[0084]FIG. 7(a) shows a graph related to the apparatus and method of the present invention. A relationship is shown in FIG. 7(a) between spraying pressure (in Mpa) of the spray material M (which pressure may be another parameter), and the weight ratio of the spray material M. The spraying pressure is of the spray material M (i.e., of the mixture of the water vapor 12 and the water mist 14) directed against the resist as the unnecessary object 24 on the surface 33 of the target article 26. In order to obtain the data on which FIG. 7(a) is based, standard values were used to establish operating conditions in addition to the pressure and the weight ratios. Exemplary data include provision of standard atmospheric pressure in the chamber 23. From the curve of FIG. 7(a) it can be easily understood that in the removal process of the present invention, the spraying pressure varies in direct proportion to variation of the weight ratio.

[0085]FIG. 7(b) shows another graph related to the apparatus and method of the present invention. A relationship is shown between vapor pressure (in Atm.) of the water vapor 14, and temperature in the chamber 23. FIG. 7(b) shows that as the mixture of water vapor 12 and water mist 14 are directed out of the nozzle 32 and have a normal (i.e., 1 Atm.) pressure, the weight ratio increases.

[0086]FIG. 8 depicts a flow chart 80 describing operations of a method of the present invention for supplying water (in the form of the spray material M) to perform removal treatment, such as cleaning of, peeling-off from, or working of, the target article 24. The method moves to an operation 82 of defining certain parameters for the supply of water vapor 12 and water mist 14 to the surface 33 of the target article 24 to be processed. In the defining operation 82, the water supply parameters are defined to include one or more of the following, which have been described above: (1) weight ratio of the water vapor 12 to the water mist 14 directed onto the surface 33 of the target article 24 to be processed, (2) the temperature Ts of such surface 33 to be processed, and (3) the distance H between a water blowing port 21 and such surface 33 to be processed. Also, parameters other than the above-described parameters (1) to (3) may be provided. For example, additional parameters may be (4) a spraying pressure (FIG. 7(a)) or a speed of the spray material M through the nozzle 32, and (5) a total amount of water vapor 12 and water mist 14 (i.e., the denominator of the weight ratio) may be defined.

[0087] The method moves to an operation 84 of supplying the water vapor 12 and the water mist 14 under the control of one or more of those defined water supply parameters. In the controlled supplying under operation 84, the one or more of the water supply parameter(s) are set to proper values so that the removal operations may be conducted under the controlled conditions for optimizing the treatment of the target article 24. These proper values relate to the characteristics of the particular unnecessary objects that may be on the surface 33 of the target article 24 that is to be processed. For example, according to characteristics of that unnecessary object on the surface 33, and as described above with respect to the resists (for example) that are the subject of FIGS. 3 through 7, an exemplary weight ratio of the water vapor 12 to the water mist 14 directed onto the surface 33 of the target article 24 may be near or at the minimum value of the weight ratio shown (e.g.) in FIG. 5. Alternatively, Parameter 1 may be selected to correspond to data for the particular unnecessary object in the manner in which FIG. 5 shows a range of weight ratios of 20% or higher, or alternatively 80% or lower. Such ranges close to such minimum value, especially the weight ratio corresponding to the minimum in which the time taken for 100% removal of the resist is unexpectedly low, are examples of optimum removal results, and may be set, or selected. The removal operations conducted with the set, or selected, parameter(s) are said to be conducted under controlled parameters. Based on the above descriptions of the controller 43, and of the valves (e.g., 53 and 58), and DIW supply 44, generator 45, and heater 51, which may be controlled by the controller 43, for example, it may be understood that values of these parameters may be set. The operation 84 may also be performed as described with respect to FIG. 2(a) in which water 15 is supplied, and then converted by the nozzle 32-1 to the water vapor 12 and the water mist 14. In a similar manner to that described above, there may be a further operation, or a further aspect of operation 84, in which the value of one or more of the parameters may be set. In the method of flow chart 80, the operation 84 may select, or set, the value of one or more of the parameters, or of each of the parameters, as described above with respect to FIGS. 3-7(a) and 7(b). In this manner, the peeling-off time resulting from the value, or from the values, may be substantially less than the peeling-off time that other- wise would result from the use of a value that is out of the most preferred range or ranges of the various values. In this regard, the term “substantially” is used as defined below.

[0088] The method moves to operation 86, in which a determination is made as to whether the peeling-off state is one of a desired percent removal, such as 100% removal. If “yes”, the removal operation is DONE. If “no”, in an operation 88 the removal operation continues via a loop 90 that returns to operation 84. The removal operation continues to be conducted under controlled conditions of operation 84 until another determination is made according to operation 86.

[0089] As another example of setting, or selecting, a parameter according to characteristics of that unnecessary object on the surface 33, and as described above with respect to the resists (for example) that are the subject of FIGS. 3 through 7, an exemplary temperature Ts may be provided for the surface 33. For the particular unnecessary object on that surface 33, and based on the curves shown in FIG. 3, a preferred temperature Ts of that surface 33 would correspond to the range in FIG. 3 of above about 50° C. to below about 150° C. In a similar manner, for that unnecessary object on that surface 33, a more preferred range of the temperature Ts could be provided, and may correspond to the about 70° C. to about 130° C. of FIG. 3, because all of the resists are removed to some extent in that exemplary range. Similar provision of the temperature Ts could be made corresponding to the still more preferable range of the temperature Ts in FIG. 3 of from about 100° C. to about 120° C. in view of the unexpectedly high (three resists 100%, and average 82%) removal of the resists. Such ranges, especially the range in which the removal of the resists is unexpectedly high, are examples of optimum removal results.

[0090] In review, controlling of the temperature Ts of the surface 33 may be by operation of the controller 43 to regulate the operation of the intermediate device 40 (including the various embodiments of the device 40) as described above so as to achieve a desired value of the temperature Ts. Such control may be by operation of the controller 43 to control the appropriate one or more of the temperature of the water mist 14, of the water 15, and of the water vapor 12, as the case may be. Also, the desired value of the temperature Ts may be set in the apparatus 22 by causing the controller 43 to set a pressure in the chamber 23 to a value that achieves a desired temperature Ts.

[0091] In a similar manner, the graph of FIG. 4 may be used to provide a clearance H for the removal operation. The delta H in FIG. 2(a) represents the table having the adjustment, which under the control of the controller 43, may vary the clearance H.

[0092] Regarding manufacturing of a target article 24, such as a semiconductor device, in a peeling-off-type removal process using a spray material M containing a mixture of water vapor 12 and water mist 14, by changing the weight ratio of the water vapor 12 to the water mist 14, it is possible to remove unnecessary objects, such as various kinds of organic materials, resists and polymers. In other words, according to the configuration of the target article and the unnecessary objects, a removal process according to the present invention can be identified corresponding, for example, to such factors as the adhesiveness between the unnecessary object to be peeled-off and the wafer of the semiconductor device.

[0093] In a target article 24 including a resist film stuck on a wafer, taken as an example of a target article 24 to be processed according to the present invention, the resist film is firmly adhered onto the wafer, forms a solid film layer, and normally has a thickness in a range of 500 to 800 nm. In this resist film on the wafer, by using the water supply apparatus 22 and the method of the present invention, removal of the resist film after ion implantation is executed very effectively.

[0094] Also using the present invention, the removal operation on the target article 24 is not limited to removal of the resist film as an unnecessary object, in that another example of a removable unnecessary object may be a polymer residue. This polymer residue is generated as a reactive produce during dry etching. By using the present invention, such a polymer residue can be removed very effectively. Further, the resist film and the polymer residue can be simultaneously removed by using the present invention, although each may be separately removed depending on the situation.

[0095] Furthermore, in the water supply apparatus 22 and the method of the present invention, the water vapor 12 and the water mist 14 are supplied, and mixed to form the spray material M, and this spray material M is directed to the target article 24 by being directly sprayed (ejected) to the surface 33 to be processed. The water vapor 12 of the spray material M (of the water vapor 12 and the water mist 14) is effective for changing quality of the resist film or the like by permeation by gas. The water mist 14 is effective for peeling-off the resist film or the like by the action of the water particles 18.

[0096] Another example of the target article 24 is a base polymer structure for forming a resist film in semiconductor device manufacturing. This structure has valence and hydrogen bonding and, by the inclusion in the spray material M of the high-temperature water vapor 12, physical changes such as softening and expansion occur in the resist film. In addition, the water vapor 12 has a high degree of permeability into the resist, causing physical property changes such as swelling, separation and coagulation to occur to cause a quality change in the chemical structure. Thus, by the high-temperature water vapor 12, the resist film, softened by hydration/swelling, is peeled-off because of weakened adhesive force with the wafer. An injection force, or a jetting-out force, of the spray material M from the nozzle device 31 (which supplies the water vapor 12 and the water mist 14 to the target article 24), becomes very effective for peeling-off the swelled resist from the surface 33 of the wafer substrate.

[0097] The water supply apparatus 22 and the method of the present invention have been described mainly with reference to the example of removing the resist film and the polymer residue as unnecessary objects in semiconductor electronic device manufacturing. However, an application range of the present invention is not limited to such an example, but includes machining and precision surface treatment fields in other electronic devices or the like. The water supply apparatus 22 and the water supply method of the present invention are very effective in the chemical cleaning and peeling-off field, including for cleaning after substrate processing by way of chemical mechanical polishing (CMP), dry etching surface cleaning, fine circuit cleaning, fine circuit forming mask cleaning and the like.

[0098] As described above, according to the water supply apparatus 22 and the method of the present invention, by setting the parameters for establishing water supply and the other conditions, and by specifying the above-described proper ranges of the parameters, the spray material M of water vapor 12 and water mist 14 can be properly and effectively sprayed and directed to the target article 24. Thus, it is possible to achieve a highly efficient water supply apparatus and method, having a high capability of peeling-off and removing unnecessary objects such as a resist film. Such high capability may be evidenced by decreased time to achieve 100% peeling-off (see FIG. 5, for example). Also, according to the present invention, only super-pure water present in a natural environment need be used, or water 15 compatible with such super-pure water (e.g., DIW), which water 15 has high compatibility with the environment and yet results in production of the spray material M capable of permeating into the surface 24 of the unnecessary object (e.g., the target organic material), weakening adhesiveness to help peeling-off. Moreover, according to the present invention, removal process control is facilitated to provide high stability, many additional prior art devices are rendered unnecessary for the removal operations of the present invention, which facilitates simple designing of the apparatus 22 of the present invention.

[0099] Further, as described with respect to the context of the exemplary data in FIG. 5, for example, the weight ratios that result in substantially less resist peeling-off time may be said to be from about 35% to about 55%. It is to be understood that for other wafers and resists and articles 24, etc., the particular weight ratio % having substantially less resist peeling-off time may be different. In a similar manner, the relationships of peeling-off percent in FIGS. 3 and 4 may have a respective temperature Ts or clearance H that result in substantially 100% peeling-off. Those exemplary substantially 100% peeling-off may be said to be from about 100 degrees C. to about 105 degrees C., for example (FIG. 3), and about 10 mm to about 15 mm in FIG. 4. It is to be understood that the term “substantially” as used with respect to peeling-off time or peeling-off % means at least a difference of 15%.

[0100] It should be appreciated that although in one embodiment the wafer carrier is aligned with the polishing pad using a gimbal, the embodiments of the present invention are not limited to CMP systems including that implement a gimbal. Additionally, although the embodiments of the present invention is shown to be implemented in CMP systems including linear polishing pads, in a different embodiment, any appropriate polishing table may be implemented (e.g., rotary, etc.) Furthermore, while the embodiments of the present invention have been described in terms of a CMP process, the complimentary sensors are not limited to a CMP process. For example, the sensors can be used within any semiconductor process that removes or deposits a layer or film on a substrate, such as etch and deposition processes. The invention has been described herein in terms of several exemplary embodiments. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention. The embodiments and preferred features described above should be considered exemplary, with the invention being defined by the appended claims. 

What is claimed is:
 1. Apparatus for supplying water for treating a target article, comprising: a system for converting the water to water vapor and water mist; and a nozzle having a main port for spraying the water vapor and water mist onto a surface of the target article; wherein the system is configured to set values of parameters to proper values for optimizing treatment of the target article, the parameters being taken from the group consisting of: a weight ratio of the water vapor to the water mist sprayed onto the surface to be treated, a temperature of the surface to be treated, and a distance between the nozzle and the surface to be treated.
 2. An apparatus according to claim 1, wherein the system is configured to set a value of the weight ratio of water vapor to water mist, the value is in a range of about 20 to 80 weight %.
 3. An apparatus according to claim 1, wherein the system is configured to set a value of the temperature of the surface to be treated, the value is in a range of about more than 50 to about less than 150° C.
 4. An apparatus according to claim 1, wherein the system is configured to set a value of the distance between the nozzle and the surface to be treated, the value is lower than about 30 mm.
 5. An apparatus according to claim 1, wherein: the target article is a semiconductor wafer, and the treatment is the removal from the surface of the target article of an unnecessary object in the form of one or more of a resist or a polymer residue, and the configured system sets the following values for the parameters: for the weight ratio of water vapor to water mist, values in a range of about 20 to 80 weight %; for the temperature of the surface, values in a range of about more than 50 to about less than 150° C.; and for the distance between the nozzle and the surface, values lower than about 30 mm.
 6. An apparatus according to claim 1, wherein the nozzle consists of two separate nozzles, one of the nozzles being for the water vapor and one of the nozzles being for the water mist, the water vapor nozzle and the water mist nozzle being coaxial and each terminating in a respective water vapor port and water mist port, the water vapor and water mist ports of the respective nozzles being configured to direct the water vapor and the water mist through the main port and downwardly toward the surface.
 7. An apparatus according to claim 1, wherein; the system consists of a separate annular-shaped heated water conduit configured with a first discharge port and to supply the water as water mist into a space adjacent to the first discharge port, the system further consists of a water vapor supply conduit within the heated water conduit and configured with a second discharge port adjacent to the first discharge port to discharge the water vapor into the space; and the main port receives the water vapor and the water mist and sprays the water vapor and water mist onto the surface of the article.
 8. Apparatus for removing an unnecessary object from a target article using only water and one or more gases, comprising: a system for converting the water to water vapor and water mist, each of the water vapor and water mist comprising one or more of the gases; a nozzle having a port for directing a mixture of the water vapor and the water mist onto a surface of the target article on which the unnecessary object is located, wherein there is a weight ratio of the water vapor to the water mist that is directed to the surface to be treated, wherein the surface has a temperature, and wherein the nozzle directs the water vapor and the water mist through a distance from the nozzle to the surface; and a controller configured to cause the system to set values of one or more parameters to proper values for optimized removal of the unnecessary object from the target article, the parameters being taken from the group consisting of: the weight ratio of the water vapor to the water mist directed to the surface, the temperature of the surface, and the distance from the nozzle to the surface of the unnecessary object.
 9. An apparatus according to claim 8, wherein the controller causes the system to set a value of the weight ratio of water vapor to water mist directed onto the surface, wherein the value is in a range of about 20 to 80 weight %.
 10. An apparatus according to claim 8, wherein the controller causes the system to set a value of the temperature of the surface, wherein the value is in a range of about more than 50 to about less than 150° C.
 11. An apparatus according to claim 8, wherein the controller causes the system to set a value of the distance from the nozzle to the surface, wherein the value is lower than about 30 mm.
 12. An apparatus according to claim 8, wherein: the target article is a semiconductor wafer, and the treatment is the removal from the surface of the target article of one or more of a resist or a polymer residue, and the controller is configured to cause the parameters to be set with the following respective values: for the weight ratio, values in a range of about 20 to 80 weight %; for the temperature of the surface, values in a range of about more than 50 to about less than 150° C.; and for the distance from the nozzle to the surface, values lower than about 30 mm.
 13. An apparatus according to claim 8, wherein a peeling-off time represents a period of time required to remove resist or residue as the unnecessary object to bow removed from the surface, and wherein: the controller is configured to cause the parameters to be set with the following respective values: for the weight ratio, a weight ratio value in the range of about 20 to 80 weight %, the weight ratio value being selected so that the peeling-off time resulting from use of the selected weight ratio value is substantially less than peeling-off times corresponding to use of other weight ratio values; for the temperature of the surface, a temperature value in the range of about more than 50 to about less than 150° C., the temperature value being selected so that the peeling-off time resulting from use of the selected temperature value is substantially less than peeling-off times corresponding to use of other temperature values; and for the distance from the nozzle to the surface, a distance value lower than about 30 mm, the distance value being selected so that the peeling-off time resulting from use of the selected distance value is substantially less than peeling-off times corresponding to use of other distance values.
 14. Apparatus for removing resist from a surface of a semiconductor wafer using only water, or only water and one or more gases, the one or more gases being taken from the group consisting of argon, nitrogen, and helium, the apparatus comprising: a system for converting the water to water vapor and water mist; a nozzle having a main port for directing a mixture of the water vapor and the water mist onto the resist on the surface of the semiconductor wafer, wherein there is a weight ratio of the water vapor to the water mist that is directed to the resist, wherein the surface has a temperature, and wherein the nozzle directs the water vapor and the water mist through a distance from the nozzle to the surface; and a controller configured to cause the system to set values of one or more parameters to proper values for optimized removal of the resist from the semiconductor wafer, the parameters being taken from the group consisting of: the weight ratio of the water vapor to the water mist directed to the resist on the surface, the temperature of the surface, and the distance from the nozzle to the surface of the resist.
 15. A method for removing a material from a surface of a target article, comprising the operations of: supplying water for the removing by one of cleaning, peeling-off and working of the target article; defining parameters for water vapor and water mist to be directed onto the target article, the parameters having proper values for optimizing the removal of the material, the parameters including one or more of: a weight ratio of the water vapor to the water mist directed onto the surface, a temperature of the surface, and a distance between a point from which the directing starts to the surface; and converting the water to a mixture of the water vapor and the water mist, the water vapor and the water mist having the proper values and being directed onto a surface of the target article.
 16. A method according to claim 15, wherein the target article is a semiconductor wafer and the material is one of a resist and a polymer, the method further comprising the operation of: causing the parameters to be set with the following respective values: for the weight ratio, values in a range of about 20 to 80 weight %; for the temperature of the surface, values in a range of about more than 50 to about less than 150° C.; and for the distance between the point and the surface, values lower than about 30 mm.
 17. A method according to claim 15, wherein a peeling-off time represents a period of time required to remove the resist or the polymer from the surface, and wherein: the causing operation is effective to select the weight ratio value so that the peeling-off time resulting from use of the selected weight ratio value is substantially less than peeling-off times corresponding to use of other weight ratio values; the causing operation is effective to select the value of the temperature of the surface so that the peeling-off time resulting from use of the selected temperature value is substantially less than peeling-off times corresponding to use of other temperature values; and the causing operation is effective to select the value of distance between the nozzle and the surface so that the peeling-off time resulting from use of the selected distance value is substantially less than peeling-off times corresponding to use of other distance values.
 18. A method according to claim 15, wherein the converting operation is performed by one of the following: directing a spray material comprising a mixture of water vapor and water mist, or directly ejecting pressurized hot water from a port to cause boiling due to pressure reduction during the directing to form the water vapor and the water mist.
 19. A method for supplying water to remove a material from a target article, comprising the operations of: defining one or more parameters for water vapor and water mist directed from a nozzle to a surface of the material on the target article, the parameters being selected from: a weight ratio of the water vapor to the water mist directed onto the surface, a temperature of the surface, and a distance between the nozzle and the surface; and supplying the water vapor and the water mist directed onto the surface under the control of one or more of the defined parameters, the value of the one or more of the defined parameters being set to a proper value to optimize the removal of the material from the surface.
 20. A method according to claim 19, wherein the supplying operation consists of selecting the following parameters with a respective value in the following ranges: for the weight ratio, a value in a range of about 20 to 80 weight %; for the temperature of the surface, a value in a range of about more than 50 to about less than 150° C.; and for the distance between the nozzle and the surface, a value lower than about 30 mm.
 21. A method according to claim 19, wherein the material is a resist or a polymer on the surface, and a peeling-off time represents a period of time required to remove the resist or the polymer from the surface, and wherein: the supplying operation under the control of one or more of the defined parameters is performed to select the values of the parameters as follows: the weight ratio value so that the peeling-off time resulting from use of the selected weight ratio value is substantially less than peeling-off times corresponding to use of other weight ratio values; the value of the temperature of the surface so that the peeling-off time resulting from use of the selected temperature value is substantially less than peeling-off times corresponding to use of other temperature values; and the value of the distance between the nozzle and the surface so that the peeling-off time resulting from use of the selected distance value is substantially less than peeling-off times corresponding to use of other distance values.
 22. A method according to claim 21, the method further comprising the operation of: determining whether the peeling-off removal is at a desired amount of removal; and continuing the supplying operation until the peeling-off removal is at the desired amount of removal. 